quantum dot electronics

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Research physicists have produced technology to use Ferroelectrics at the Nano level to deliver unprecedented memory storage capacity – NFRAM. The polarization of the material at the Nanoscale level produces a vortex where the charges swirl in a circular pattern. The vortex of charge can then have either a clockwise or counterclockwise spin which can stand for either a “1” or a “0”.

Key Benefits:                                                                                                                                                

  • 100,000 times more dense than current memory storage devices
  • 100 trillion bits per square inch vs. 1 billion bits per square inch with today’s technology
  • No Crosstalk between elements so the data remains Distortion Free
  • Fewer components required. Less complex and less costly to manufacture
  • Very Low Power Consumption. Needs almost no power to maintain the data
  • Very high number of write-erase cycles so the memory drive will last significantly longer and be more reliable
  • Up to 100 times faster access to data so you can get more done in the same amount of time.For more information visit